- 您现在的位置：买卖IC网 > Sheet目录413 > FCA20N60FS (Fairchild Semiconductor)MOSFET N-CH 600V 20A TO-3PN
December 2013
FCA20N60F
N-Channel SuperFET ? FRFET ? MOSFET
600 V, 20 A, 190 mΩ
Features Description
? 650 V @ T J = 150°C
? Typ. R DS(on) = 150 m ?
? Fast Recovery Type (Typ. T rr = 160 ns )
? Ultra Low Gate Charge (Typ. Q g = 75 nC )
? Low Effective Output Capacitance (Typ. C os s(eff.) = 165 pF )
? 100% Avalanche Tested
? RoHS Compliant
Applications
? LCD / LED / PDP TV
? Solar Inverter
SuperFET ? MOSFET is Fairchild Semiconductor’s first
generation of high voltage super-junction (SJ) MOSFET family
that is utilizing charge balance technology for outstanding low
on-resistance and lower gate charge performance. This
technology is tailored to minimize conduction loss, provide
superior switching performance, dv/dt rate and higher
avalanche energy. Consequently, SuperFET MOSFET is very
suitable for the switching power applications such as PFC,
server/telecom power, FPD TV power, ATX power and industrial
power applications. SuperFET FRFET ? MOSFET’s optimized
body diode reverse recovery performance can remove
additional component and improve system reliability.
? AC-DC Power Supply
D
S
G
D
Absolute Maximum Ratings
TO-3PN
T C = 25°C unless otherwise noted.
G
S
Symbol
V DSS
Drain-Source Voltage
Parameter
FCA20N60F
600
Unit
V
I D
Drain Current
- Continuous (T C = 25 ° C)
- Continuous (T C = 100 ° C)
20
12.5
A
A
I DM
V GSS
Drain Current
Gate-Source voltage
- Pulsed
(Note 1)
60
± 30
A
V
E AS
I AR
E AR
dv/dt
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
690
20
20.8
50
mJ
A
mJ
V/ns
P D
Power Dissipation
(T C = 25 ° C)
- Derate . bove 25 ° C
208
1.67
W
W/ ° C
T J, T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
-55 to +150
300
° C
° C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FCA20N60F
0.6
40
Unit
° C/W
° C/W
?2007 Fairchild Semiconductor Corporation
FCA20N60F Rev C2
1
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
FCA22N60N
MOSFET N-CH 600V 22A TO-3PN
FCA35N60
MOSFET N-CH 600V 35A TO-3PN
FCA36N60NF
MOSFET N-CH 600V 34.9A TO3PN
FCA47N60_F109
MOSFET N-CH 600V 47A TO-3P
FCA47N60F
MOSFET N-CH 600V 47A TO-3PN
FCA76N60N
MOSFET N-CH 600V 76A TO-3PN
FCB20N60FTM
MOSFET N-CH 600V 20A D2PAK
FCB20N60TM
MOSFET N-CH 600V 20A D2PAK
相关代理商/技术参数
FCA20N60S
制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述:
FCA20N60S_F109
功能描述:MOSFET 650V, SUPER FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FCA20N60S-F109
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:600V N-Channel MOSFET
FCA-210
制造商:未知厂家 制造商全称:未知厂家 功能描述:Mid-Range Military/Aerospace Relays
FCA-210-0905M
功能描述:通用继电器 RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
FCA-210-0908M
功能描述:通用继电器 M83536/9-008M RoHS:否 制造商:Omron Electronics 触点形式:1 Form A (SPST-NO) 触点电流额定值:150 A 线圈电压:24 VDC 线圈电阻:144 Ohms 线圈电流:167 mA 切换电压:400 V 安装风格:Chassis 触点材料:
FCA-210-0910L
制造商:TE Connectivity 功能描述:
FCA-210-0910M
制造商:TE Connectivity 功能描述: